View NTJS4160N_4764499.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

NTJS4160N Power MOSFET
30 V, 3.2 A, Single N-Channel, SC-88
Features
* Offers an Low RDS(on) Solution in the SC-88 Package * Low Profile (< 1.1 mm) Allows it to fit Easily into Extremely Thin * * *
Environments such as Portable Electronics Operates at Standard Logic Level Gate Drive Low Gate Charge This is a Pb-Free Device
V(BR)DSS 30 V
http://onsemi.com
RDS(on) TYP 45 mW @ 10 V 65 mW @ 4.5 V ID Max 3.2 A
Applications
* DC-DC Converters (Buck and Boost Circuit) * Optimized for Battery Powered Portable Equipment such as, * *
Cell Phones, PDAs, Media Players, etc. Load Management Battery Charging and OV IC Protection Circuits
MARKING DIAGRAM
6 1
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t1s Power Dissipation (Note 1) Steady State t1s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25 C Steady State TA = 85 C TA = 25 C PD IDM TJ, TSTG IS TL ID TA = 25 C TA = 85 C TA = 25 C PD TA = 25 C 0.95 1.8 1.3 0.3 10 -55 to 150 1.3 260 W A A Symbol VDSS VGS ID Value 30 20 2.6 1.9 3.2 0.62 W Unit V V A
SC-88 (SOT 363) CASE 419B STYLE 28
T7 MG G 1
T7 = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
SC-88 (SOT-363)
D 1 6 D
D
2
5
D
tp = 10 ms
G
3 Top View
4
S
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
C
A C
ORDERING INFORMATION
Device NTJS4160NT1G Package SC-88 (Pb-Free) Shipping 3000 Units/Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
1
March, 2008 - Rev. 1
Publication Order Number: NTJS4160N/D
NTJS4160N
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t 1 s (Note 3) Junction-to-Ambient - Steady State (Note 4) Symbol RqJA RqJA RqJA Max 200 132 420 Unit C/W
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, ID = 250 mA ID = 250 mA, ref to 25C VGS = 0 V, VDS = 24 V TJ = 25C TJ = 125C 30 20 1.0 10 100 -200 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current
IGSS
VDS = 0 V, VGS = +20 V VDS = 0 V, VGS = -20 V
ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V, ID = 2.6 A VGS = 4.5 V, ID = 2.2 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 1.3 A TJ = 25C TJ = 125C 0.79 0.67 10.3 VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.3 A 7.2 3.1 4.0 nC ns 1.2 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 15 V, ID = 1.0 A, RG = 6.0 W 8.7 7.2 10.9 1.9 15 13 19 4.0 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 15 V, ID = 2.6 A VGS = 0 V, f = 1.0 MHz, VDS = 10 V 230 62 39 2.75 0.37 0.87 1.1 nC pF gFS VGS = 5.0 V, ID = 3.0 A VGS = VDS, ID = 250 mA 0.8 -5.0 45 65 4.2 60 85 S 2.4 V mV/C mW
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
tRR Ta Tb QRR
5. Pulse Test: pulse width 300 ms, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTJS4160N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
10 9 ID, DRAIN CURRENT (AMPS) 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.0 V 2.8 V 2.6 V 2.4 V 3.5 4 TJ = 25C 3.4 V 3.2 V 6V to 10 V 5V 4.0 V VGS = 3.8 V 3.6 V ID, DRAIN CURRENT (AMPS) 10 9 8 7 6 5 4 3 2 1 0 1 TJ = 150C TJ = -55C 1.5 2 2.5 3 3.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 25C VDS 4 V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.4 TJ = 25C 0.35 ID = 2.6 A 0.3 0.25 0.2 0.15 0.1 0.05 0 1.0 2.0 3.0 6.0 7.0 8.0 5.0 VGS, GATE VOLTAGE (V) 4.0 9.0 10 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.1
Figure 2. Transfer Characteristics
TJ = 25C VGS = 4.5 V
0.05
VGS = 10 V
0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ID, DRAIN CURRENT (AMPS) 9.0 10
Figure 3. On-Resistance vs. Gate Voltage
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
1000
1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 ID = 2.6 A 4.5 < VGS < 10 V
VGS = 0 V TJ = 150C IDSS, LEAKAGE (nA) 100 TJ = 125C
10
1 -25 0 25 50 75 100 125 150 0 10 15 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
http://onsemi.com
3
NTJS4160N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
VGS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 400 350 C, CAPACITANCE (pF) 300 250 200 150 100 50 0 0 10 5 15 20 25 DRAIN-TO-SOURCE VOLTAGE (VOLTS) 30 Crss Coss Ciss 5 TJ = 25C QT VDS QGS 3 10 2 5 ID = 2.6 A TJ = 25C 0 1 2 3 QG, TOTAL GATE CHARGE (nC) QGD VGS 20 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
4
15
1 0
0
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
100 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1.0 A VGS = 4.5 V t, TIME (ns)
10
td(off) td(on) tr
tf 1 1 10 RG, GATE RESISTANCE (OHMS) 100
1.3 VGS = 0 V 1.2 1.1 TJ = 150C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.4 0.5 0.6
TJ = 125C TJ = 25C
TJ = -40C
0.7
0.8
0.9
1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
4
NTJS4160N
PACKAGE DIMENSIONS
SC-88 (SOT-363) CASE 419B-02 ISSUE W
D e
STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000
6
5
4
HE
1 2 3
-E-
b 6 PL 0.2 (0.008)
M
E
M
DIM A A1 A3 b C D E e L HE
A3 C A
SOLDERING FOOTPRINT*
0.50 0.0197
A1
L 0.65 0.025 0.65 0.025 0.40 0.0157
1.9 0.0748
SCALE 20:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P Box 5163, Denver, Colorado 80217 USA .O. Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
http://onsemi.com
5
NTJS4160N/D

▲Up To Search▲

Price & Availability of NTJS4160N

	To Download NTJS4160N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .